Sensitive area of 2.0 × 1.0mm2 element substrate material.
Silicon substrate thickness 0.5mm.
Operating wavelength 7-14um.
The average transmittance \u003e 75%.
The output signal \u003e 2.5V (420 ° k blackbody 1Hz bandwidth modulation frequency 0.3-3.0Hz 72.5db gain ).
Noise \u003c200mV (mVp-p) (25 °).
The balance of \u003c 20%.
Operating voltage 2.2-15V
Working current 8.5-24μA (VD = 10V, Rs = 47kΩ, 25 °).
Source voltage 0.4-1.1V (VD = 10V, Rs = 47kΩ, 25 °).
Operating temperature -20 ° - + 70 °.
Storage temperature -35 ° - + 80 ° field of 139 ° × 126 °.
Description The sensor uses the polarization of pyroelectric material changes with temperature characteristics of the detection of infrared radiation sensitive element dual complementary method to suppress interference temperature changes , improve the work stability of the sensor .
1. The above specifications are the source resistor R2 = 47KΩ measured under conditions when the user using the sensor can be adjusted R2 size according to their needs .
2, note the location of the sensing element and the field size , in order to get the best optical design.
3 , all measurements are based on the voltage signal peak to peak calibration . B balance of EA and EB , respectively, peak to peak voltage of the sensing element output signal.
4 , the use of the sensor , the pins bending or welding parts should be more than 4mm from base .
5 , before the use of sensors , you should refer to the picture pins , in particular, to prevent a wrong pin.
1 * RE200B SN200B00 PIR Human Pyroelectric Infrared Sensor.